CAJ | 학술논문

高压P-LDMOS的失效实验分析表明其沟道区的高峰值电场会导致沟道区的热载流子效应,从而将降低高压P-LDMOS的可靠性.借助半导体器件专业软件Tsuprem-4和Medici的模拟给出了高压P-LDMOS沟道区的电场分布情况,模拟结果显示在沟道区存在2个峰值电场,讨论了产生这2个峰值电场的原因,同时给出了降低这2种峰值电场的有效方法--适当增加沟道的长度和降低沟道区的浓度.实验结果表明采用这2种方法优化得到的高压P-LDMOS的栅击穿电压得到了很大的提高,同时P-LDMOS的可靠性也得以大幅提高.
고압P-LDMOS적실효실험분석표명기구도구적고봉치전장회도치구도구적열재류자효응,종이장강저고압P-LDMOS적가고성.차조반도체기건전업연건Tsuprem-4화Medici적모의급출료고압P-LDMOS구도구적전장분포정황,모의결과현시재구도구존재2개봉치전장,토론료산생저2개봉치전장적원인,동시급출료강저저2충봉치전장적유효방법--괄당증가구도적장도화강저구도구적농도.실험결과표명채용저2충방법우화득도적고압P-LDMOS적책격천전압득도료흔대적제고,동시P-LDMOS적가고성야득이대폭제고.
The failure experiments of the P-LDMOS (lateral double diffused metal oxide semiconductor)demonstrate that the high peak electrical fields in the channel region of high-voltage P-LDMOS will reinforce the hot-carrier effect, which can greatly reduce the reliability of the P-LDMOS. The electrical field distribution and two field peaks along the channel surface are proposed by Tsuprem-4 and Medici. The reason of resulting in the two electrical field peaks is also discussed. Two ways of reducing the two field peaks, which are to increase the channel length and to reduce the channel concentration, are also presented. The experimental results show that the methods presented can effectively improve the gate breakdown voltage and greatly improve the reliability of the P-LDMOS.