新型薄膜SOI高压MOSFET的研制
신형박막SOI고압MOSFET적연제
Development of Novel Thin-Film SOI High Voltage MOSFET
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2003年 12期 1261-1265 ,共5页

    李文宏%罗晋生

    리문굉%라진생

    绝缘体上硅%金属氧化物半导体场效应晶体管%高压器件 絕緣體上硅%金屬氧化物半導體場效應晶體管%高壓器件
    절연체상규%금속양화물반도체장효응정체관%고압기건
    SOI%MOSFET%high voltage device
    研制了两种薄膜SOI高压MOSFET,一种是一般结构,另一种是新的双漂移区结构.两者的栅宽均为760μm,有源区面积为8.58×10-2mm2,测试表明其击穿电压分别为17V和26V,导通电阻分别为80Ω和65Ω.
    연제료량충박막SOI고압MOSFET,일충시일반결구,령일충시신적쌍표이구결구.량자적책관균위760μm,유원구면적위8.58×10-2mm2,측시표명기격천전압분별위17V화26V,도통전조분별위80Ω화65Ω.
    Two kinds of thin-film SOI high voltage MOSFETs are developed. One is general structure,the other is novel two-drift-region structure. The gate width is 760μm,and the active area is 8.58 × 10-2mm2. The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively ,and the on resistances are 65Ω and 80Ω,respectively.
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