半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2003年
3期
255-259
,共5页
孙增辉%陈弘达%毛陆虹%崔增文%高鹏
孫增輝%陳弘達%毛陸虹%崔增文%高鵬
손증휘%진홍체%모륙홍%최증문%고붕
反向击穿硅p-n结%硅基光发射器件%击穿电压%CMOS
反嚮擊穿硅p-n結%硅基光髮射器件%擊穿電壓%CMOS
반향격천규p-n결%규기광발사기건%격천전압%CMOS
reverse bias silicon p-n junction%silicon based LED%breakdown voltage%CMOS
采用工业标准0.6μm CMOS工艺设计了以反向击穿硅p-n结为基础的光发射器件.讨论了该器件的光发射机理.利用商业模拟软件对器件的工作特性进行了模拟,包括器件的正向和反向I-V特性、p区掺杂浓度对击穿电压的影响以及门电压对器件发光强度的调制特性的影响等.结果表明该器件是一种很有前途的硅发光器件,在光互连等领域具有广阔的应用前景.
採用工業標準0.6μm CMOS工藝設計瞭以反嚮擊穿硅p-n結為基礎的光髮射器件.討論瞭該器件的光髮射機理.利用商業模擬軟件對器件的工作特性進行瞭模擬,包括器件的正嚮和反嚮I-V特性、p區摻雜濃度對擊穿電壓的影響以及門電壓對器件髮光彊度的調製特性的影響等.結果錶明該器件是一種很有前途的硅髮光器件,在光互連等領域具有廣闊的應用前景.
채용공업표준0.6μm CMOS공예설계료이반향격천규p-n결위기출적광발사기건.토론료해기건적광발사궤리.이용상업모의연건대기건적공작특성진행료모의,포괄기건적정향화반향I-V특성、p구참잡농도대격천전압적영향이급문전압대기건발광강도적조제특성적영향등.결과표명해기건시일충흔유전도적규발광기건,재광호련등영역구유엄활적응용전경.
A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.
