CAJ | 학술논문

采用共溅射方法和Eu离子注入热生长的SiO2方法得到SiO2(Eu)薄膜，Eu离子的浓度为4％和0.5％。对样品X射线吸收近边结构(XANES)的研究和分析表明，在高温氮气中发生了Eu3+向Eu2+的转变。SiO2(Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论。
채용공천사방법화Eu리자주입열생장적SiO2방법득도SiO2(Eu)박막，Eu리자적농도위4％화0.5％。대양품X사선흡수근변결구(XANES)적연구화분석표명，재고온담기중발생료Eu3+향Eu2+적전변。SiO2(Eu)박막고온담기퇴화하람광적발사증명료저일결론。
Eu ions doped SiO2 thin films,SiO2 (Eu),were prepared by co-sputtering of SiO2 and Eu2O3 and Eu ion implantation into thermally grown SiO2 films.The Eu-L3-edge X-ray absorption near edge structure (XANES) spectra of SiO2 (Eu) films show a doublet absorption peak structure with energy difference of 7 eV,which indicates the conversion of Eu3 + to Eu2+ at high annealing temperature in N2.The strong blue luminescence of SiO2(Eu) films prepared by ions implantation after films annealed above 1100 ℃ confirms the above argument.