CAJ | 학술논문

分析和模拟了SiC JFET在高温下出现的栅电流．模拟结果反映出在温度高于700K以后栅电流对SiC JFET的影响将越来越显著，在此基础上该文建立起了一个6H-SiC JFET的高温模型．模型中采用了SiC的两极电离杂质模型和Caughey-Thomas方程．在300-773K的温度范围内．模型的模拟结果和实验数据相符．
분석화모의료SiC JFET재고온하출현적책전류．모의결과반영출재온도고우700K이후책전류대SiC JFET적영향장월래월현저，재차기출상해문건립기료일개6H-SiC JFET적고온모형．모형중채용료SiC적량겁전리잡질모형화Caughey-Thomas방정．재300-773K적온도범위내．모형적모의결과화실험수거상부．
The gate leakage current of 6H-SiC JFET in high temperature has been analyzed and simulated, The result shows that the effect of the gate leakage current on JFET will become more and more notable when the temperature is higher than 700K. Based on the analysis, a model of 6H-SiC JFET for high temperature is proposed, in which the two-level donor ionization model and Caughey-Thomas equation are included. The simulated results are in good agreement with measured data in a wide range of temperature from 300K to 773K.