CAJ | 학술논문

This article gives a review on the physics and technical issues involved in the development of ZnS-based Ⅱ-Ⅵ visible-blind UV photodetectors. The results of photoresponse studies on ZnS, ZnSSe and ZnSTe diodes indicate that Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low Te containing ZnSTe Schottky barrier photodiodes. The results also reveal that the ZnSSe diode, having the advantage of being free of isoelectronic centers, is a more suitable choice for applications requiring high visible rejection power. It is demonstrated that highly UV sensitive responsivity with an abrupt long wavelength cutoff tailored to lie between 340-400nm can be achieved in the ZnSSe diode system.