CAJ | 학술논문

为研究氧化铱(IrO2)对PZT铁电薄膜疲劳性能的影响，利用直流(DC)磁控反应溅射(sputtering)工艺成功地在SiO2/Si(100)衬底上制得了高度取向的IrO2薄膜. 并在其上制成PZT铁电薄膜. 讨论了溅射参数(溅射功率、Ar/O2比、衬底温度)以及退火条件对氧化铱薄膜的结晶、取向和形态的影响.
위연구양화의(IrO2)대PZT철전박막피로성능적영향，이용직류(DC)자공반응천사(sputtering)공예성공지재SiO2/Si(100)츤저상제득료고도취향적IrO2박막. 병재기상제성PZT철전박막. 토론료천사삼수(천사공솔、Ar/O2비、츤저온도)이급퇴화조건대양화의박막적결정、취향화형태적영향.
Iridium oxide (IrO2) thin films were successfully grown on SiO2/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target(99.9% purity). PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O2) and growth temperatureand annealing conditions on the crystalline nature and morphology of IrO2 thin films was discussed.