半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2003年
2期
127-132
,共6页
霍宗亮%毛凌锋%谭长华%许铭真
霍宗亮%毛凌鋒%譚長華%許銘真
곽종량%모릉봉%담장화%허명진
缺陷%MOS结构%时变击穿
缺陷%MOS結構%時變擊穿
결함%MOS결구%시변격천
defect%MOS structure%time-dependence dielectric breakdown
基于一阶速率方程,讨论了恒定电压应力下应力电流的饱和行为.通过对应力电流的拟合,发现存在三类缺陷产生的前身.更进一步的统计实验显示,在缺陷产生时间常数、击穿时间以及应力电压之间存在着明确的关系.这意味着缺陷产生时间常数能够被用于有效预测氧化层的寿命.与常规的氧化层击穿实验相比,基于缺陷产生时间常数的预测更快、更有效.
基于一階速率方程,討論瞭恆定電壓應力下應力電流的飽和行為.通過對應力電流的擬閤,髮現存在三類缺陷產生的前身.更進一步的統計實驗顯示,在缺陷產生時間常數、擊穿時間以及應力電壓之間存在著明確的關繫.這意味著缺陷產生時間常數能夠被用于有效預測氧化層的壽命.與常規的氧化層擊穿實驗相比,基于缺陷產生時間常數的預測更快、更有效.
기우일계속솔방정,토론료항정전압응력하응력전류적포화행위.통과대응력전류적의합,발현존재삼류결함산생적전신.경진일보적통계실험현시,재결함산생시간상수、격천시간이급응력전압지간존재착명학적관계.저의미착결함산생시간상수능구피용우유효예측양화층적수명.여상규적양화층격천실험상비,기우결함산생시간상수적예측경쾌、경유효.
The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation,the time-to-breakdown,and stress voltage.It also means that the time constant of trap generation can be used to predict oxide lifetime.This method is faster for TDDB study compared with usual breakdown experiments.