CAJ | 학술논문

利用等离子增强化学气相沉积(PECVD)方法沉积了氮化硅薄膜,反应气体为氨气和硅烷.这些薄膜在不同条件(温度、时间和气氛)下进行了炉温或快速退火.对太阳电池而言,氮化硅薄膜不仅是有效的减反射层而且也有表面钝化和体钝化作用.利用椭圆偏振光谱、反射谱、红外吸收谱和准稳态光电导(QSSPC)分析了氮化硅薄膜的特性.实验发现随着退火温度的增加,氮化硅薄膜的厚度下降而折射率增加,可以归因于在退火过程中,薄膜愈加致密.红外吸收谱的研究发现,氮化硅中氢的含量在退火过程中有明显的下降,而QSSPC测量的样品寿命有同样的变化.这些结果显示氮化硅的钝化作用与其中的氢含量有关.
이용등리자증강화학기상침적(PECVD)방법침적료담화규박막,반응기체위안기화규완.저사박막재불동조건(온도、시간화기분)하진행료로온혹쾌속퇴화.대태양전지이언,담화규박막불부시유효적감반사층이차야유표면둔화화체둔화작용.이용타원편진광보、반사보、홍외흡수보화준은태광전도(QSSPC)분석료담화규박막적특성.실험발현수착퇴화온도적증가,담화규박막적후도하강이절사솔증가,가이귀인우재퇴화과정중,박막유가치밀.홍외흡수보적연구발현,담화규중경적함량재퇴화과정중유명현적하강,이QSSPC측량적양품수명유동양적변화.저사결과현시담화규적둔화작용여기중적경함량유관.
Silicon nitride (SiN) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) of silane (SiH4) and ammonia (NH3) reactants. Subsequently they were annealed in a furnace or rapid thermal processing (RTP) on different conditions (temperature, time and ambient). SiN thin films are used not only as very efficient antireflection coating but also as surface and bulk passivation on silicon solar cells. The characterization of SiN thin films was studied by spectral ellipsometry, reflection spectra, infrared absorption spectroscopy (IR) and quasi-steady state photoconductance (QSSPC) measurements. It was found by means of spectral ellipsometry that the thickness of SiN films decreased and the refractive index increased as the annealing temperature increased, which were most likely due to the more and more compact structure of SiN films. The reflection index was also investigated. There was significant hydrogen incorporation as well as the characteristic Si-N bands in the IR spectra. The hydrogen content in SiN thin films can be determined followed by integration of Si-H and N-H absorption bands. The effective minority carrier lifetimes of the samples were measured by QSSPC. The efficiency of SiN passivation was related with hydrogen content.