CAJ | 학술논문

纳米交叉杆结构因其结构简单、制备工艺成熟而成为研究者最为关注的一种纳米存储器件.纳米交叉杆基于具有双稳态性质的纳米器件,有机分子层交叉结构和碳纳米管交叉结构都是比较成熟的纳米交叉结构.基于纳米交叉杆的存储器一般由外围微-纳结构多路选择器和存储阵列组成,要想在高密度存储的基础上实现快速读写必须研究并行读写方法.并行读写的基础是并行寻址,一种可选的并行寻址方式是地址加掩码的模式,这种模式后再加一个筛选向量即可大大增加并行寻址的灵活度.纳米交叉杆存储器的并行写可分为写1和写0两个子过程,安排最佳的并行访问方式是二维平面上的背包问题.并行读过程可以一次将一行或一列的内容读取出来.
납미교차간결구인기결구간단、제비공예성숙이성위연구자최위관주적일충납미존저기건.납미교차간기우구유쌍은태성질적납미기건,유궤분자층교차결구화탄납미관교차결구도시비교성숙적납미교차결구.기우납미교차간적존저기일반유외위미-납결구다로선택기화존저진렬조성,요상재고밀도존저적기출상실현쾌속독사필수연구병행독사방법.병행독사적기출시병행심지,일충가선적병행심지방식시지지가엄마적모식,저충모식후재가일개사선향량즉가대대증가병행심지적령활도.납미교차간존저기적병행사가분위사1화사0량개자과정,안배최가적병행방문방식시이유평면상적배포문제.병행독과정가이일차장일행혹일렬적내용독취출래.
Nano-scale cross-switch,with simple structure and mature fabrication,has been attracting more and more attention.In this paper,several classic nanocrossbar devices are reviewed,their storage mechanism is introduced and the basic component of the memory arrays is discussed.A new demultiplexer is proposed,which makes it possible to address a set of nanowires parallel in a single array.Then several parallel accessing methods are given and a mathematical model is built for the best parallel accessing strategy.