CAJ | 학술논문

研究了InGaAs/InP材料的MOCVD生长技术和材料的性能特征.InP衬底的晶向偏角能够明显影响外延生长模型以及外延层的表面形貌,用原子力显微镜(AFM)观察到了外延层表面原子台阶的聚集现象(step-bunching现象),通过晶体表面的原子台阶密度和二维生长模型解释了台阶聚集现象的形成.对外延材料进行化学腐蚀,通过双晶X射线衍射(DCXRD)分析发现异质结界面存在应力,用异质结界面岛状InAs富集解释了应力的产生.通过严格控制InGaAs材料的晶格匹配,并优化MOCVD外延生长工艺,制备出厚层InGaAs外延材料,获得了低于1×10~(15)cm~(-3)的背景载流子浓度和良好的晶体质量.
연구료InGaAs/InP재료적MOCVD생장기술화재료적성능특정.InP츤저적정향편각능구명현영향외연생장모형이급외연층적표면형모,용원자력현미경(AFM)관찰도료외연층표면원자태계적취집현상(step-bunching현상),통과정체표면적원자태계밀도화이유생장모형해석료태계취집현상적형성.대외연재료진행화학부식,통과쌍정X사선연사(DCXRD)분석발현이질결계면존재응력,용이질결계면도상InAs부집해석료응력적산생.통과엄격공제InGaAs재료적정격필배,병우화MOCVD외연생장공예,제비출후층InGaAs외연재료,획득료저우1×10~(15)cm~(-3)적배경재류자농도화량호적정체질량.
InGaAs/InP material growth technique and the characteristics were discussed. The surface morphology and the growth mode changing caused by InP substrate mis-orientation were analyzed. The trenches of multiple mono-layer (so called step-bunching) on the epi-layer surface were observed by AFM measurement. The step-bunching was explained by the surface step intensity and the two dimension growth mode. The materials were chemical etched layer by layer. The etched samples were analyzed by double crystal X-ray diffraction (DCXRD). The origination of the strain was traced and explained by the InAs islands location on the interface. The mismatch between InGaAs and InP was exactly controlled. The bulk InGaAs material was grown under optimized MOCVD growth conditions. Very good crystal quality and low background concentration (1 × 10~(15) cm~(-3)) of InGaAs were achieved.