CAJ | 학술논문

成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中.在Vce=1.1V,Ic=33.5mA的偏置条件下,发射极尺寸为1.4μm×1.5μm的器件,其ft达到210GHz.这种器件非常适合高速低功耗方面的应用,例如超高速数模混合电路以及光学通信系统等.
성공지장Polyimide둔화평탄화공예응용우InP/InGaAs단이질결정체관제작공예중.재Vce=1.1V,Ic=33.5mA적편치조건하,발사겁척촌위1.4μm×1.5μm적기건,기ft체도210GHz.저충기건비상괄합고속저공모방면적응용,례여초고속수모혼합전로이급광학통신계통등.
Polyimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bi- polar transistors (SHBTS) are developed. A maximum extrapolated ft of 210GHz is achieved for the SHBT with 1.4μm×1.5μm emitter area at VCE=1.1V and IC=33.5mA. This device is suitable for high speed and low power applications,such as ultra high speed mixed signal circuits and optoelectronic communication Ics.