Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth
  • 万方数据
    中国科学A辑(英文版) 중국과학A집(영문판)
    SCIENCE IN CHINA
    2002年 11期 1461-1467 ,共7页

    冯淦%郑新和%朱建军%沈晓明%张宝顺%赵德刚%孙元平%张泽洪%王玉田%杨辉%梁骏吾

    풍감%정신화%주건군%침효명%장보순%조덕강%손원평%장택홍%왕옥전%양휘%량준오



    GaN%epitaxial lateral overgrowth%crystallographic tilt%double crystal X-ray diffraction


    The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) onsapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). Itwas found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular toseeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak relatedwith the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak Bdisappeared gradually when the mask began to be removed by selective etching. Only narrowpeak A remained when the SiNx mask was removed completely. A model based on these resultshas been developed to show that there are two factors responsible for the crystallographic tilt: Oneis the non-uniformity elastic deformation caused by the interphase force between the ELO GaNlayer and the SiNx mask. The other is the plastic deformation, which is attributed to the change ofthe threading dislocations (TDs) from vertical in the window regions to the lateral in the regionsover the mask.
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