仪表技术与传感器
儀錶技術與傳感器
의표기술여전감기
INSTRUMENT TECHNIQUE AND SENSOR
2010年
2期
1-3
,共3页
于留波%赵湛%方震%杜利东%丁国杰
于留波%趙湛%方震%杜利東%丁國傑
우류파%조담%방진%두리동%정국걸
承压膜%电阻变化率%冯米塞斯应力%屈服应力
承壓膜%電阻變化率%馮米塞斯應力%屈服應力
승압막%전조변화솔%풍미새사응력%굴복응력
pressure accepted membrane%resistance change rate%Von Mises stress%yield stress
文中从金属应变式压力传感器的基本理论出发,以硅弹性膜铂应变电阻压力传感器为原型.推导了圆形和方形弹性膜片上电阻的变化率(aR/R)公式.通过比较,选用方形弹性膜为压力承压膜,以优化承压膜的宽厚比为出发点,用有限元方法对不同厚度方形膜片(宽度为2 mm)进行应力分析.由硅材料的屈服应力与最大位移的限制,确定了最优的膜厚范围;根据有限元仿真的结果对压力传感器进行优化设计,对所做压力传感器芯片进行测试,在6.00 × 10~4~1.06×10~5 Pa的范围内,其精度优于50 Pa.
文中從金屬應變式壓力傳感器的基本理論齣髮,以硅彈性膜鉑應變電阻壓力傳感器為原型.推導瞭圓形和方形彈性膜片上電阻的變化率(aR/R)公式.通過比較,選用方形彈性膜為壓力承壓膜,以優化承壓膜的寬厚比為齣髮點,用有限元方法對不同厚度方形膜片(寬度為2 mm)進行應力分析.由硅材料的屈服應力與最大位移的限製,確定瞭最優的膜厚範圍;根據有限元倣真的結果對壓力傳感器進行優化設計,對所做壓力傳感器芯片進行測試,在6.00 × 10~4~1.06×10~5 Pa的範圍內,其精度優于50 Pa.
문중종금속응변식압력전감기적기본이론출발,이규탄성막박응변전조압력전감기위원형.추도료원형화방형탄성막편상전조적변화솔(aR/R)공식.통과비교,선용방형탄성막위압력승압막,이우화승압막적관후비위출발점,용유한원방법대불동후도방형막편(관도위2 mm)진행응력분석.유규재료적굴복응력여최대위이적한제,학정료최우적막후범위;근거유한원방진적결과대압력전감기진행우화설계,대소주압력전감기심편진행측시,재6.00 × 10~4~1.06×10~5 Pa적범위내,기정도우우50 Pa.
According to the basic theory of mental strain pressure sensors,this paper selected the flexible silicon membrane platinum resistance strain pressure Sensor as a prototype,deducing the formulas of resistance change rate(dR/R) of circular and square elastic membrane.By comparing,this paper adopted square elastic membrane as pressure accepted membrane and used fi-nite element method to analyze stress of different thick membrane in order to optimize the wideness-thickness-rate of pressure ac-cepted membrane.Because of the limitation of yield stress of silicon material and maximum displacement,it obtained the optimal range of thickness.According to the result of finite element simulation,the design of pressure sensor was optimized.The pressure sensor chip is tested from 6.00×10~4 Pa to 1.06×10~5 Pa,its precision range is within 50 Pa.