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현대현시
ADVANCED DISPLAY
2011年
7期
23-28
,共6页
闫方亮%沈世妃%侯智%刘祖宏%郑载润%刘锋%李斗熙
閆方亮%瀋世妃%侯智%劉祖宏%鄭載潤%劉鋒%李鬥熙
염방량%침세비%후지%류조굉%정재윤%류봉%리두희
TFT%a-Si厚度%电学特性%工作电流%阈值电压%迁移率
TFT%a-Si厚度%電學特性%工作電流%閾值電壓%遷移率
TFT%a-Si후도%전학특성%공작전류%역치전압%천이솔
TFT%a-Si thickness%electrical characteristic%Ion%Vth%Mob
通过在线电学测试设备,研究了不同a-Si厚度对TFT开关电学特性的影响。本试验通过调整刻蚀时间改变沟道内a-Si的剩余厚度,在此基础上找出电学特性比较稳定的区域和电学特性变差的临界点。试验结果表明,在其它条件不变的情况下,a-Si剩余厚度在33～61%时TFT的电学特性比较好,a-Si剩余厚度小于33%之后,TFT的电学特性变差,即工作电流变小,阈值电压变大,迁移率变小。
通過在線電學測試設備,研究瞭不同a-Si厚度對TFT開關電學特性的影響。本試驗通過調整刻蝕時間改變溝道內a-Si的剩餘厚度,在此基礎上找齣電學特性比較穩定的區域和電學特性變差的臨界點。試驗結果錶明,在其它條件不變的情況下,a-Si剩餘厚度在33～61%時TFT的電學特性比較好,a-Si剩餘厚度小于33%之後,TFT的電學特性變差,即工作電流變小,閾值電壓變大,遷移率變小。
통과재선전학측시설비,연구료불동a-Si후도대TFT개관전학특성적영향。본시험통과조정각식시간개변구도내a-Si적잉여후도,재차기출상조출전학특성비교은정적구역화전학특성변차적림계점。시험결과표명,재기타조건불변적정황하,a-Si잉여후도재33～61%시TFT적전학특성비교호,a-Si잉여후도소우33%지후,TFT적전학특성변차,즉공작전류변소,역치전압변대,천이솔변소。
The Electrical Characteristics of TFT with different a-Si remained thickness was studied by the online Electrical test equipment.In this experiment,a-Si remained thickness was modified by different etch time.The stable area and poor point of the TFT electrical properties were found in this experiment.Results show that,while other conditions invariable,better electrical properties were obtained when a-Si remained thickness is in the range of 33~61%.When lower than 33%,the TFT＇s electrical characteristics become poor,that is,operating current and mobility become small,threshold voltage become large.
