CAJ | 학술논문

用分子束外延(MBE)方法生长了InAsSb/InSb多量子阱结构,并对其进行250 ℃、8 h的退火.采用X射线光电子能谱(XPS),通过Ar离子刻蚀对样品退火前后进行了深度分析,研究退火对In、As、Sb 3种元素价态和纵向元素浓度分布的影响.结果表明,长时间低温退火增强了表面氧化,促使As和Sb元素发生次层原子向表层的扩散和样品内部该两种元素的扩散.
용분자속외연(MBE)방법생장료InAsSb/InSb다양자정결구,병대기진행250 ℃、8 h적퇴화.채용X사선광전자능보(XPS),통과Ar리자각식대양품퇴화전후진행료심도분석,연구퇴화대In、As、Sb 3충원소개태화종향원소농도분포적영향.결과표명,장시간저온퇴화증강료표면양화,촉사As화Sb원소발생차층원자향표층적확산화양품내부해량충원소적확산.
InAsSb/InSb muiti-quantum wells were grown by molecular beam epitaxy(MBE) and then they were annealed at 250 ℃ for 8 h. X-ray photoelectron spectrum was used to study the influence of annealing on the valences and atoms distribution of In, As and Sb by Ar ion bombardment. The results show that: after annealing, the oxidation of the elements is intensified; As and Sb of the subsurface diffuse to the surface and the ones of the inner layers also diffuse to each other.