纳米技术与精密工程
納米技術與精密工程
납미기술여정밀공정
NANOTECHNOLOGY AND PRECISION ENGINEERING
2007年
3期
157-163
,共7页
徐鸿博%李明雨%金宗明%金大元
徐鴻博%李明雨%金宗明%金大元
서홍박%리명우%금종명%금대원
感应加热%界面反应%无铅钎料%球栅阵列
感應加熱%界麵反應%無鉛釬料%毬柵陣列
감응가열%계면반응%무연천료%구책진렬
induction heating%interfacial reaction%lead-free solder%ball grid array
感应自发热重熔(ISHR)技术在电子互连的应用中具有明显的三维选择性加热和快速加热等优点.该方法能够很好地解决由于无铅钎料的应用引起的日益严重的诸多问题,如球栅阵列中各钎料球受热不均匀和芯片基板与钎料球同时受热等.为此,采用ISHR进行了无铅钎料Sn3.5Ag在Au/Ni/Cu焊盘上的重熔实验、高温老化实验以及凸台剪切实验.由实验结果可知钎料凸台可以提供足够的剪切强度.文中讨论了界面反应和金属间化合物的演化.在老化期间界面处生长了连续的Ni3Sn4金属间化合物层,同时在钎料体内部生成了分散的(Aux,Ni1-x)Sn4化合物.金属间化合物的生长速度与老化时间的平方根成正比,由此可以判断金属间化合物的生长是一种扩散控制过程.
感應自髮熱重鎔(ISHR)技術在電子互連的應用中具有明顯的三維選擇性加熱和快速加熱等優點.該方法能夠很好地解決由于無鉛釬料的應用引起的日益嚴重的諸多問題,如毬柵陣列中各釬料毬受熱不均勻和芯片基闆與釬料毬同時受熱等.為此,採用ISHR進行瞭無鉛釬料Sn3.5Ag在Au/Ni/Cu銲盤上的重鎔實驗、高溫老化實驗以及凸檯剪切實驗.由實驗結果可知釬料凸檯可以提供足夠的剪切彊度.文中討論瞭界麵反應和金屬間化閤物的縯化.在老化期間界麵處生長瞭連續的Ni3Sn4金屬間化閤物層,同時在釬料體內部生成瞭分散的(Aux,Ni1-x)Sn4化閤物.金屬間化閤物的生長速度與老化時間的平方根成正比,由此可以判斷金屬間化閤物的生長是一種擴散控製過程.
감응자발열중용(ISHR)기술재전자호련적응용중구유명현적삼유선택성가열화쾌속가열등우점.해방법능구흔호지해결유우무연천료적응용인기적일익엄중적제다문제,여구책진렬중각천료구수열불균균화심편기판여천료구동시수열등.위차,채용ISHR진행료무연천료Sn3.5Ag재Au/Ni/Cu한반상적중용실험、고온노화실험이급철태전절실험.유실험결과가지천료철태가이제공족구적전절강도.문중토론료계면반응화금속간화합물적연화.재노화기간계면처생장료련속적Ni3Sn4금속간화합물층,동시재천료체내부생성료분산적(Aux,Ni1-x)Sn4화합물.금속간화합물적생장속도여노화시간적평방근성정비,유차가이판단금속간화합물적생장시일충확산공제과정.
Induction self heat reflow (ISHR) technology has the obvious advantages of 3D selective heating and high heating speed for electronic interconnects. It can solve the problems such as inhomogeneous heating of different solder bumps in ball grid array, simultaneous heating of chip and carrier with solder ball, etc.,which have been increasingly serious with the worldwide application of lead-free solder. The aging test and bump shear test of Sn3.5Ag solder bumps reflowed on the Au/Ni/Cu pad through ISHR were carried out. It is shown that the bumps can supply sufficient shear strength for use. Interfacial reaction and IMC evolution were discussed. During the aging time a continual pure Ni3Sn4 layer exists at the interface, and dispersed (Auz,Ni1-x)Sn4 inside solder matrix. Thickness of IMC increases linearly with square root of aging time, which shows that IMC growth is a diffusion-controlled process.