CAJ | 학술논문

用脉冲激光沉积(PLD)技术制备了ZnO/SiC/Si和 ZnO/Si薄膜并制成了紫外探测器.利用X射线衍射(XRD),光致发光(PL)谱,I-V曲线和光电响应谱对薄膜的结构和光电性能进行了研究.实验结果表明:SiC缓冲层改善了ZnO薄膜的结晶质量和光电性能,其原因可能是SiC作为柔性衬底能够减少ZnO与Si 之间大的晶格失配和热失配导致的界面缺陷和界面态.
용맥충격광침적(PLD)기술제비료ZnO/SiC/Si화 ZnO/Si박막병제성료자외탐측기.이용X사선연사(XRD),광치발광(PL)보,I-V곡선화광전향응보대박막적결구화광전성능진행료연구.실험결과표명:SiC완충층개선료ZnO박막적결정질량화광전성능,기원인가능시SiC작위유성츤저능구감소ZnO여Si 지간대적정격실배화열실배도치적계면결함화계면태.
The films of ZnO/SiC/Si and ZnO/Si were grown by pulsed-laser-deposition (PLD) technique and were processed to fabricate ultraviolet (UV) detectors. The effects of SiC buffer layer on the structure and photoelectrical properties of ZnO films grown on Si (111) substrates were investigated by the X-ray diffraction (XRD), photoluminescence (PL), current-voltage (I-V) and photoelectrical response measurements. The results showed that the SiC buffer layer can effectively improve the crystalline qualities, optical and photoelectrical properties of the ZnO thin film grown on Si substrate. It is obvious that, as a compliant substrate, SiC buffer layer makes the interface defects and interface state density reduce because the partial stress induced by large crystal lattice mismatch and thermal mismatch between ZnO and SiC can be relaxed.