CAJ | 학술논문

在多孔Si上使用不同催化剂成功生长ZnO纳米结构.结果表明,Au作催化剂在Si衬底上得到末端呈六角形的ZnO纳米棒,Cu作催化剂在Si(100)和(111)分别上生长出带状和棒状纳米ZnO,Zn作催化剂在Si衬底上则获得ZnO纳米线.Zn催化制备的ZnO纳米线晶面间距为0.283nm,生长方向是[0110],具有结晶较好的六角纤锌矿晶体结构.比较了不同催化剂制备ZnO的光学性能,发现得到Zn催化制备的ZnO纳米线缺陷绿光峰最弱,因此Zn催化生长制备的纳米ZnO结构质量较好.空气中退火后,3种催化剂生长的纳米ZnO的缺陷发光峰位置不变,而强度变弱.
재다공Si상사용불동최화제성공생장ZnO납미결구.결과표명,Au작최화제재Si츤저상득도말단정륙각형적ZnO납미봉,Cu작최화제재Si(100)화(111)분별상생장출대상화봉상납미ZnO,Zn작최화제재Si츤저상칙획득ZnO납미선.Zn최화제비적ZnO납미선정면간거위0.283nm,생장방향시[0110],구유결정교호적륙각섬자광정체결구.비교료불동최화제제비ZnO적광학성능,발현득도Zn최화제비적ZnO납미선결함록광봉최약,인차Zn최화생장제비적납미ZnO결구질량교호.공기중퇴화후,3충최화제생장적납미ZnO적결함발광봉위치불변,이강도변약.
The growth of zinc oxide(ZnO)nanostructures on Au-, Cu- and Zn-filled (111) and (100) porous silicons (PSs) has been investigated. The results indicate that the ZnO nanostructures grown on Au-filled (111) PS are possessed of rod-shapes with hexagonal end faces, those on the Cu-filled (100) or (111) PS are possessed of belt-shapes or rod-shapes, and those on the Zn-filled(100) or (111) PS are possessed of wire-shapes. The ZnO growth on the Au- and Cu-filled PS are mainly along c-axis orientation,while its growth on the Zn-filled PS are mainly along [0110] orientation, and it possesses a single crystal hexagonal structure without dislocations and stacking faults. In addition, the green emission intensity of the ZnO grown on Zn-filled PS caused by oxygen vacancies of the ZnO is weaker than that of the ZnO grown on Au (Cu)-filled PS,. It could be concluded that the ZnO grown on Zn-filled PS produces a better quality. After annealing in air, the positions of the green emission peaks do not vary, while the intensities are weakened.