半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2005年
2期
225-229
,共5页
薛玉明%孙云%何青%刘芳芳%李长键%汲明亮
薛玉明%孫雲%何青%劉芳芳%李長鍵%伋明亮
설옥명%손운%하청%류방방%리장건%급명량
CdS%Cu(In,Ga)Se2%立方相%六方相
CdS%Cu(In,Ga)Se2%立方相%六方相
CdS%Cu(In,Ga)Se2%립방상%륙방상
CdS%Cu(In,Ga)Se2%cubic phase%hexagonal phase
报道了CdS薄膜的CBD法沉积及其结构特性,其中的水浴溶液包括硫脲、乙酸镉、乙酸铵和氨水溶液.研究了水浴溶液的pH值、温度、各反应物溶液的浓度和滴定硫脲与倾倒硫脲等基本工艺参数对CdS薄膜结构特性的影响.其中,溶液的pH值对CdS薄膜的特性起着关键的作用.XRD图显示了随着溶液pH值的变化,薄膜的晶相由六方相向立方相转变.CdS薄膜的这两种晶相对CIGS薄膜太阳电池性能的影响不相同.c-CdS(立方相的CdS)与CIGS之间的晶格失配和界面态密度分别为1.419%和8.507×1012cm-2,而h-CdS(六方相的CdS)与CIGS之间的晶格失配和界面态密度则分别为32.297%和2.792×1012cm-2.高效CIGS薄膜太阳电池需要的是立方相CdS薄膜.
報道瞭CdS薄膜的CBD法沉積及其結構特性,其中的水浴溶液包括硫脲、乙痠鎘、乙痠銨和氨水溶液.研究瞭水浴溶液的pH值、溫度、各反應物溶液的濃度和滴定硫脲與傾倒硫脲等基本工藝參數對CdS薄膜結構特性的影響.其中,溶液的pH值對CdS薄膜的特性起著關鍵的作用.XRD圖顯示瞭隨著溶液pH值的變化,薄膜的晶相由六方相嚮立方相轉變.CdS薄膜的這兩種晶相對CIGS薄膜太暘電池性能的影響不相同.c-CdS(立方相的CdS)與CIGS之間的晶格失配和界麵態密度分彆為1.419%和8.507×1012cm-2,而h-CdS(六方相的CdS)與CIGS之間的晶格失配和界麵態密度則分彆為32.297%和2.792×1012cm-2.高效CIGS薄膜太暘電池需要的是立方相CdS薄膜.
보도료CdS박막적CBD법침적급기결구특성,기중적수욕용액포괄류뇨、을산력、을산안화안수용액.연구료수욕용액적pH치、온도、각반응물용액적농도화적정류뇨여경도류뇨등기본공예삼수대CdS박막결구특성적영향.기중,용액적pH치대CdS박막적특성기착관건적작용.XRD도현시료수착용액pH치적변화,박막적정상유륙방상향립방상전변.CdS박막적저량충정상대CIGS박막태양전지성능적영향불상동.c-CdS(립방상적CdS)여CIGS지간적정격실배화계면태밀도분별위1.419%화8.507×1012cm-2,이h-CdS(륙방상적CdS)여CIGS지간적정격실배화계면태밀도칙분별위32.297%화2.792×1012cm-2.고효CIGS박막태양전지수요적시립방상CdS박막.
Deposition and structural characteristics of cadmium sulfide (CdS) thin films by chemical bath deposition (CBD) technique from a bath containing thiourea,cadmium acetate,ammonium acetate and ammonia in an aqueous solution are reported.Researches are made on the influence of the fundamental parameters including pH,temperature,and concentrations of the solution involved in the chemical bath deposition of CdS and titration or dumping of the thiourea solution on the structure characteristic of CdS thin films.The pH of the solution plays a vital role on the characteristic of the CdS thin films.The XRD patterns show that the change in the pH of the solution results in the change in crystal phase from predominant hexagonal phase to predominant cubic phase.The CdS thin films with the two different crystal phases have different influences on CIGS thin film solar cells.The crystal mismatch and the interface state density of the c-CdS(cubic phase CdS) and CIGS are about 1.419% and 8.507×1012cm-2 respectively,and those of the h-CdS(hexagonal phase CdS) and CIGS are about 32.297% and 2.792×1012cm-2 respectively.It is necessary for high efficiency CIGS thin film solar cells to deposit the cubic phase CdS thin films.