CAJ | 학술논문

研究了同一P阱内两个130 nm NMOS器件在受到重离子辐射后产生的电荷共享效应.使用TCAD仿真构造并校准了130 nm NMOS管.研究了在有无p~+保护环结构及不同器件间距下,处于截止态的NMOS晶体管之间的电荷共享,给出了电荷共享效应与SET脉冲电流产生的机理.同时分析了NMOS晶体管中的寄生双极管效应对反偏漏体结电荷收集的加剧作用.仿真结果表明,p~+保护环可以有效地减小NMOS器件间的电荷共享,加速SET脉冲电流的泄放,证实了p~+保护环对器件抗单粒子辐射的有效性,从而给出了该方法在抗单粒子辐射器件版图设计中的可行性.
연구료동일P정내량개130 nm NMOS기건재수도중리자복사후산생적전하공향효응.사용TCAD방진구조병교준료130 nm NMOS관.연구료재유무p~+보호배결구급불동기건간거하,처우절지태적NMOS정체관지간적전하공향,급출료전하공향효응여SET맥충전유산생적궤리.동시분석료NMOS정체관중적기생쌍겁관효응대반편루체결전하수집적가극작용.방진결과표명,p~+보호배가이유효지감소NMOS기건간적전하공향,가속SET맥충전류적설방,증실료p~+보호배대기건항단입자복사적유효성,종이급출료해방법재항단입자복사기건판도설계중적가행성.
The charge sharing effect between 130 nm NMOS devices in the same p-well occurring after heavy ion irradiation was investigated. TCAD simulation was used to generate and calibrate the 130 nm NMOSFET. The charge sharing effects between two 130 nm off-NMOSFETs with and without p~+ guard-ring,and with different device distance were explored. The charge sharing effect and SET current generating mechanisms wre represented. The exacerbating effect of parasitic bipolar effect in the charge collection in the reverse-biased drain-body junction of an off-NMOSFET was also represented. The simulation results demonstrate that the p~+ guard-ring can effectively reduce the charge sharing effect between NMOSFETs and accelerate the discharge of the SET current. The effectiveness of p~+ guard-ring using in the migrating of single event effect and the feasibility of its use in radiation hardening by layout design are validated.