CAJ | 학술논문

通过测量界面陷阱的产生,研究了超薄栅nMOS和pMOS器件在热载流子应力下的应力感应漏电流(SILC).在实验结果的基础上,发现对于不同器件类型(n沟和p沟)、不同沟道长度(1、0.5、0.275和0.135μm)、不同栅氧化层厚度(4和2.5nm),热载流子应力后的SILC产生和界面陷阱产生之间均存在线性关系.这些实验证据表明MOS器件减薄后,SILC的产生与界面陷阱关系非常密切.
통과측량계면함정적산생,연구료초박책nMOS화pMOS기건재열재류자응력하적응력감응루전류(SILC).재실험결과적기출상,발현대우불동기건류형(n구화p구)、불동구도장도(1、0.5、0.275화0.135μm)、불동책양화층후도(4화2.5nm),열재류자응력후적SILC산생화계면함정산생지간균존재선성관계.저사실험증거표명MOS기건감박후,SILC적산생여계면함정관계비상밀절.
Stress-induced leakage current (SILC) of ultrathin gate oxide is investigated by observing the generation of interface traps for n-MOSFET and p-MOSFET under hot-carrier stress.It is found experimentally that there is linear correlation between the generation of interface traps and SILC for both types of MOSFET with different channel lengths (including 1,0.5,0.275,and 0.135μm) and different gate oxide thickness (4nm and 2.5nm).These experimental evidences show that the SILC has a strong dependence on interface traps.