SiC薄膜高温压力传感器
SiC박막고온압력전감기
High temperature pressure sensor based on SiC films
  • 万方数据
    传感器技术 전감기기술
    JOURNAL OF TRANSDUCER TECHNOLOGY
    2001年 2期 1-3 ,共3页

    朱作云%李跃进%杨银堂%柴常春%贾护军%韩小亮%王文襄%刘秀娥%王麦广

    주작운%리약진%양은당%시상춘%가호군%한소량%왕문양%류수아%왕맥엄

    压力传感器%高温%碳化硅%薄膜 壓力傳感器%高溫%碳化硅%薄膜
    압력전감기%고온%탄화규%박막
    SiC是制造高温半导体压力传感器的理想材料。介绍了在Si衬底上外延生长3C-SiC薄膜和用它制作的SiC高温压力传感器，并对研制结果进行了分析。简单介绍了其它几种SiC压力传感器的特点、结构和制作方法。
    SiC시제조고온반도체압력전감기적이상재료。개소료재Si츤저상외연생장3C-SiC박막화용타제작적SiC고온압력전감기，병대연제결과진행료분석。간단개소료기타궤충SiC압력전감기적특점、결구화제작방법。
    SiC is an ideal material for manufacturing higy temperature pressure sensor.The films of cubic SiC are heteroepitaxially grown on Si substrates for SiC high temperature pressure sensor.The characteristics,structure,manufacture and results of some types of SiC pressure sensors are briefly introduced.
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