发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2001年
z1期
17-20
,共4页
陈振%袁海荣%陆大成%王晓晖%刘祥林%韩培德%汪度%王占国
陳振%袁海榮%陸大成%王曉暉%劉祥林%韓培德%汪度%王佔國
진진%원해영%륙대성%왕효휘%류상림%한배덕%왕도%왕점국
GaN%三甲基镓流量%缓冲层%MOVPE
GaN%三甲基鎵流量%緩遲層%MOVPE
GaN%삼갑기가류량%완충층%MOVPE
采用金属有机物气相外延法在蓝宝石衬底上生长了以GaN为缓冲层的GaN薄膜.研究了不同三甲基镓流量下所生长缓冲层对GaN外延层质量的影响.对样品采用X线双晶衍射法测试其结晶质量,光致发光法测试其光学特性.实验结果显示高三甲基镓流量下生长的缓冲层可以提高GaN外延层的质量.对缓冲层进行的原子力显微镜测试分析表明:不同三甲基镓流量会显著地影响缓冲层的生长模式.根据试验结果构造了一个GaN缓冲层的生长模型.
採用金屬有機物氣相外延法在藍寶石襯底上生長瞭以GaN為緩遲層的GaN薄膜.研究瞭不同三甲基鎵流量下所生長緩遲層對GaN外延層質量的影響.對樣品採用X線雙晶衍射法測試其結晶質量,光緻髮光法測試其光學特性.實驗結果顯示高三甲基鎵流量下生長的緩遲層可以提高GaN外延層的質量.對緩遲層進行的原子力顯微鏡測試分析錶明:不同三甲基鎵流量會顯著地影響緩遲層的生長模式.根據試驗結果構造瞭一箇GaN緩遲層的生長模型.
채용금속유궤물기상외연법재람보석츤저상생장료이GaN위완충층적GaN박막.연구료불동삼갑기가류량하소생장완충층대GaN외연층질량적영향.대양품채용X선쌍정연사법측시기결정질량,광치발광법측시기광학특성.실험결과현시고삼갑기가류량하생장적완충층가이제고GaN외연층적질량.대완충층진행적원자력현미경측시분석표명:불동삼갑기가류량회현저지영향완충층적생장모식.근거시험결과구조료일개GaN완충층적생장모형.
The GaN films were grown on different buffer layer that was deposited with different Trimethylgallium (TMGa) molar flow rate (FTMGa) by metalorganic vapor phase epitaxy (MOVPE). The samples were measured by X-ray Diffraction (XRD), and photoluminescence (PL). The results indicated that the GaN epilayer grown on buffer that was deposited under higher FTMGa condition had better quality. Atomic force microscopy (AFM) analysis of the bufferlayer showed that the growth model was different for various FTMGa growth condition. A model of GaN buffer layer growth process was proposed.
