电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2010年
2期
14-16
,共3页
WO_3纳米粉体%ZnS掺杂%共沉淀法%气敏元件
WO_3納米粉體%ZnS摻雜%共沉澱法%氣敏元件
WO_3납미분체%ZnS참잡%공침정법%기민원건
WO_3 nanopowder%ZnS doping%copercipitation method%gas sensor
采用共沉淀法制备了w(ZnS)为0~0.2%的ZnS-WO_3纳米粉体,利用X射线衍射仪分析了粉体的微观结构,探讨了ZnS掺杂量、工作温度对由所制粉体制成的气敏元件的气敏性能的影响.研究发现:适量的ZnS掺杂抑制了WO_3晶粒的生长,提高了粉体对H_2S的灵敏度.其中,掺杂ZnS的质量分数为1.0%的烧结型气敏元件,在160 ℃时对体积分数为0.001%的H_2S的灵敏度达到87,响应时间7 s,恢复时间12 s.
採用共沉澱法製備瞭w(ZnS)為0~0.2%的ZnS-WO_3納米粉體,利用X射線衍射儀分析瞭粉體的微觀結構,探討瞭ZnS摻雜量、工作溫度對由所製粉體製成的氣敏元件的氣敏性能的影響.研究髮現:適量的ZnS摻雜抑製瞭WO_3晶粒的生長,提高瞭粉體對H_2S的靈敏度.其中,摻雜ZnS的質量分數為1.0%的燒結型氣敏元件,在160 ℃時對體積分數為0.001%的H_2S的靈敏度達到87,響應時間7 s,恢複時間12 s.
채용공침정법제비료w(ZnS)위0~0.2%적ZnS-WO_3납미분체,이용X사선연사의분석료분체적미관결구,탐토료ZnS참잡량、공작온도대유소제분체제성적기민원건적기민성능적영향.연구발현:괄량적ZnS참잡억제료WO_3정립적생장,제고료분체대H_2S적령민도.기중,참잡ZnS적질량분수위1.0%적소결형기민원건,재160 ℃시대체적분수위0.001%적H_2S적령민도체도87,향응시간7 s,회복시간12 s.
ZnS-doped WO_3 nanopowder containing 0~2.0% ZnS (mass fraction) was prepared by coprecipitation.The microstructure prepared powder was characterized through XRD.The effects of ZnS-doped amount and working temperature on the gas sensitive property of the sensor fabricated from this nanopowder were investigated.The results show that the grain size of WO_3 becomes smaller and the sensitivity of the sensor to H_2S rises when the ZnS-doped amount is suitable.The sensor has high sensitivity and good selectivity to H_2S when mass fraction of ZnS doped is 1.0% and the optimal working temperature of the sensor is 160 ℃.The sensitivity of the sensor to φ( H_2S) of 0.001% is 87, response time is 7 s and recovery time is 12 s.