CAJ | 학술논문

采用射频等离子体化学增强型气相沉积(rF-PECVD)法沉积了掺氮氟化非晶碳膜.研究了不同射频功率下薄膜样品表面形貌及I-U特性,比较了试样I-U曲线的对称性及零点漂移;分析了直接沉积及硅陈列沉积下膜场发射电流的重复稳定性的差异;研究了不同掺氯流量比下沉积薄膜的Fower-Nord-heim曲线.研究结果表明,氯氟化非晶碳膜是良好的冷阴极发射材料.射频功率的提升,有利于薄膜质量和性能改善;硅陈列沉积FN-DLC膜场测试的场发射电流的重复性能较直接沉积的更加稳定优良;F-N曲线基本为直线,掺氮氟化非晶碳膜的场发射为冷阴极发射,逸出功随着含氮量的升高而增大.
채용사빈등리자체화학증강형기상침적(rF-PECVD)법침적료참담불화비정탄막.연구료불동사빈공솔하박막양품표면형모급I-U특성,비교료시양I-U곡선적대칭성급영점표이;분석료직접침적급규진렬침적하막장발사전류적중복은정성적차이;연구료불동참록류량비하침적박막적Fower-Nord-heim곡선.연구결과표명,록불화비정탄막시량호적랭음겁발사재료.사빈공솔적제승,유리우박막질량화성능개선;규진렬침적FN-DLC막장측시적장발사전류적중복성능교직접침적적경가은정우량;F-N곡선기본위직선,참담불화비정탄막적장발사위랭음겁발사,일출공수착함담량적승고이증대.
Nitrogen doped fluorinated carbon films were deposited by plasma enhanced chemical vapor deposi-tion. Surface morphology and Ⅰ-Ⅴ characteristics of the thin film samples were studied under different RF pow-ers. The symmetry and zero drift of the Ⅰ-Ⅴ characteristics of the films were compared. Repeatability and sta-bility of the field emission current of the films deposited directly and deposited on silicon array were analyzed. Fower-Nordheim curves of the samples at different nitrogen doping were compared and researched. The results show that FN-DLC films were good launching cold cathode materials, and the quality and the performance of the thin films were improved with the enhancement of BF power. The stability of the field emission current of the films deposited on silicon array was more stable and more excellent than the films deposited directly. F-N curves of the thin films were nearly straight lines, the field emission of the FN-DLC thin films were cold cath-ode fired and the work function increased as the nitrogen doping increased.