CAJ | 학술논문

针对毫米波电路对大电流、高截止频率器件的要求,利用平坦化技术,设计并制作成功了结构紧凑的四指合成InGaAs/InP异质结双极晶体管.实验结果表明发射极的宽度可减小到1μm.Kirk电流可达到110wA,电流增益截止频率达到176GI-Iz.这种器件有望在中等功率的毫米波电路中有所应用.
침대호미파전로대대전류、고절지빈솔기건적요구,이용평탄화기술,설계병제작성공료결구긴주적사지합성InGaAs/InP이질결쌍겁정체관.실험결과표명발사겁적관도가감소도1μm.Kirk전류가체도110wA,전류증익절지빈솔체도176GI-Iz.저충기건유망재중등공솔적호미파전로중유소응용.
To meet the requirements of millimeter wave circuits for high-current and high cutoff-frequency devices.a com-pact 4-finger InGaAs/InP single heterostructure bipolar transistor(HBT)was designed and fabricated successfully by using planarization technology.The results show that the width of the emitter fingers is as small as lμm,the high Kirk current of 4-finger HBT reaches 110wA,and the current gain cutoff frequency is as high as 176GHz.The device is promising on the applications in the medium-power circuits operating at millimeter-wave range.