CAJ | 학술논문

在商用标准0.6μm体硅CMOS工艺下,设计了采用普通单栅及多栅版图结构的nMOS和pMOS晶体管作为测试样品,讨论其经过γ射线照射后的总剂量辐照特性.辐照中器件采用不同电压偏置,并在辐照前后对器件的源漏极间泄漏电流、阈值电压漂移及跨导特性进行测量.研究表明nMOS总剂量效应对器件的版图结构非常敏感,而pMOS的总剂量效应几乎不受版图结构的影响.
재상용표준0.6μm체규CMOS공예하,설계료채용보통단책급다책판도결구적nMOS화pMOS정체관작위측시양품,토론기경과γ사선조사후적총제량복조특성.복조중기건채용불동전압편치,병재복조전후대기건적원루겁간설루전류、역치전압표이급과도특성진행측량.연구표명nMOS총제량효응대기건적판도결구비상민감,이pMOS적총제량효응궤호불수판도결구적영향.
Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6 μm CMOS/bulk process to study their total ionizing dose (TID) radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after γ-ray irradiation.Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.