CAJ | 학술논문

研究了低栅电压范围的热载流子统一退化模型.发现对于厚氧化层的p-MOSFETs主要退化机制随应力电压变化而变化,随着栅电压降低,退化机制由氧化层俘获向界面态产生转变,而薄氧化层没有这种情况,始终是界面态产生;此外退化因子与应力电压成线性关系.最后得出了不同厚度的p-MOSFETs的统一退化模型,对于厚氧化层,退化由电子流量和栅电流的乘积决定,对于薄氧化层,退化由电子流量决定.
연구료저책전압범위적열재류자통일퇴화모형.발현대우후양화층적p-MOSFETs주요퇴화궤제수응력전압변화이변화,수착책전압강저,퇴화궤제유양화층부획향계면태산생전변,이박양화층몰유저충정황,시종시계면태산생;차외퇴화인자여응력전압성선성관계.최후득출료불동후도적p-MOSFETs적통일퇴화모형,대우후양화층,퇴화유전자류량화책전류적승적결정,대우박양화층,퇴화유전자류량결정.
Hot-carrier effects of p-MOSFETs with different oxide-thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent on gate voltage.For the devices with thicker oxides,saturated drain current degradation has a close relationship with the product of gate current and electron fluence.For small dimensional devices,saturated drain current degradation has a close relationship with the electron fluence.This degradation model is valid for p-MOSFETs with 0.25μm channel length and different gate oxide-thicknesses.