CAJ | 학술논문

采用电化学腐蚀的方法成功地制备了厚膜p型宏孔多孔硅.氢氟酸和二甲基甲酰胺按体积比1:4组成电化学腐蚀的溶液.通过在不同条件下制备的多组样品,得出了多孔硅生长速度与电流密度以及腐蚀厚度与腐蚀时间的函数关系.通过ESEM对所制样品进行了表面和截面形貌分析,得出30 mA/cm2～50 mA/cm2的阳极电流密度是制备高质量厚膜p型宏孔多孔硅的最佳条件.
채용전화학부식적방법성공지제비료후막p형굉공다공규.경불산화이갑기갑선알안체적비1:4조성전화학부식적용액.통과재불동조건하제비적다조양품,득출료다공규생장속도여전류밀도이급부식후도여부식시간적함수관계.통과ESEM대소제양품진행료표면화절면형모분석,득출30 mA/cm2～50 mA/cm2적양겁전류밀도시제비고질량후막p형굉공다공규적최가조건.
Thick p-type macropore porous silicon was successfully fabricated with a typical electrochemical etching method.The mixed solution of HF and organic dimethylformamide with a volume ratio of 1:4 was used as the electrolyte in this experiment. The relationships of growth rate as a function of current density and anodization duration for thickness of PS were concluded. ESEM observation confirmed the high quality thick p-type macropore porous silicon could be grown under the optimal anodic current density range of 30 mA/cm2～50 mA/cm2.