CAJ | 학술논문

基于SOI薄膜,提出一种引入P+N注入结的光敏BJMOSFET(Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor)结构.在此光敏器件中,栅电压使薄膜耗尽但不反型,光生载流子的复合可以忽略.根据基本的半导体方程,建立该器件的物理模型.数值模拟结果显示:在光敏BJMOSFET中,光生电子和空穴都参与导电,和传统的MOS管相比具有较高的灵敏度.此外,它能消除CMOS工艺下PN结大的暗电流,完全与CMOS工艺兼容.
기우SOI박막,제출일충인입P+N주입결적광민BJMOSFET(Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor)결구.재차광민기건중,책전압사박막모진단불반형,광생재류자적복합가이홀략.근거기본적반도체방정,건립해기건적물리모형.수치모의결과현시:재광민BJMOSFET중,광생전자화공혈도삼여도전,화전통적MOS관상비구유교고적령민도.차외,타능소제CMOS공예하PN결대적암전류,완전여CMOS공예겸용.
A novel structure of BJMOSFEU adding P+N injection on the Semiconductor on Insulator(SOI) film was developed.In this device, recombination of carriers was ingnored due to operating in depletion region.Its physical model was presented based on standard semiconductor equation.Numerical results indicate that the photon-generated electron and photon-generated hole are both the carriers in photo-BJMOSFET, thus it is more sensitive than the conventional MOS.It can also eliminate the big dark current of PN junction under CMOS technology, and is compatible with CMOS technology.