CAJ | 학술논문

采用人造刚玉高温炉管对4H-SiC进行1620℃的离子注入后退火.实验测试发现,在刚玉管壁析出的微量铝的作用下,SiC表面与残余的氧成分反应生成衍生物SiOC,造成材料表面粗糙和反应离子刻蚀速率很低.分别采用该种样片和正常样片制作了单栅MESFET,对比测试的欧姆接触和I-V输出特性,评估了高温退火后材料表面对器件的影响.
채용인조강옥고온로관대4H-SiC진행1620℃적리자주입후퇴화.실험측시발현,재강옥관벽석출적미량려적작용하,SiC표면여잔여적양성분반응생성연생물SiOC,조성재료표면조조화반응리자각식속솔흔저.분별채용해충양편화정상양편제작료단책MESFET,대비측시적구모접촉화I-V수출특성,평고료고온퇴화후재료표면대기건적영향.
For very high temperature annealing (1620℃) after ion implantation for 4H silicon carbide (4H-SiC),the residual components of Al and O in the alundum furnace impact seriously on the surface of material,which yields the derivation of SiOC.This causes a significant degradation of the 4H-SiC surface characteristics according to the results of surface composition analysis.As validity,Ni/SiC ohmic contact measurement illustrates a higher specific contact resistance than the normal value by a factor of 2～3.Consequently the MESFET fabricated with this kind of 4H-SiC material results in a degraded I-V output performance compared with that of normal 4H-SiC MESFET.