电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2010年
2期
24-27
,共4页
微波介质陶瓷%介电性能%偏钛酸镁(MgTiO_3)%主晶相%致密化烧结
微波介質陶瓷%介電性能%偏鈦痠鎂(MgTiO_3)%主晶相%緻密化燒結
미파개질도자%개전성능%편태산미(MgTiO_3)%주정상%치밀화소결
microwave dielectric ceramic%dielectric property%MgTiO_3%major phase%densification sintering
采用固相反应法,在0.92MgTiO_3-0.08CaTiO_3配比的基础上,制备了不同Mg_2SiO_4添加量的MgO-TiO_2-CaO-SiO_2复合陶瓷体系,研究了Mg_2SiO_4添加量对其物相结构、微观形貌及微波介电性能的影响.结果表明,体系中不存在杂相,其致密化烧结温度随Mg_2SiO_4添加量的增加而提高,添加适量Mg_2SiO_4能够降低体系的ε_r和谐振频率温度系数τ_f.当添加质量分数为35%的Mg_2SiO_4,体系在1 360 ℃烧结2 h可获得优异的微波介电性能:ε_r = 15.5,Q·f = 42 640 GHz(6 GHz),τ_f = - 13×10~(-6)/ ℃.
採用固相反應法,在0.92MgTiO_3-0.08CaTiO_3配比的基礎上,製備瞭不同Mg_2SiO_4添加量的MgO-TiO_2-CaO-SiO_2複閤陶瓷體繫,研究瞭Mg_2SiO_4添加量對其物相結構、微觀形貌及微波介電性能的影響.結果錶明,體繫中不存在雜相,其緻密化燒結溫度隨Mg_2SiO_4添加量的增加而提高,添加適量Mg_2SiO_4能夠降低體繫的ε_r和諧振頻率溫度繫數τ_f.噹添加質量分數為35%的Mg_2SiO_4,體繫在1 360 ℃燒結2 h可穫得優異的微波介電性能:ε_r = 15.5,Q·f = 42 640 GHz(6 GHz),τ_f = - 13×10~(-6)/ ℃.
채용고상반응법,재0.92MgTiO_3-0.08CaTiO_3배비적기출상,제비료불동Mg_2SiO_4첨가량적MgO-TiO_2-CaO-SiO_2복합도자체계,연구료Mg_2SiO_4첨가량대기물상결구、미관형모급미파개전성능적영향.결과표명,체계중불존재잡상,기치밀화소결온도수Mg_2SiO_4첨가량적증가이제고,첨가괄량Mg_2SiO_4능구강저체계적ε_r화해진빈솔온도계수τ_f.당첨가질량분수위35%적Mg_2SiO_4,체계재1 360 ℃소결2 h가획득우이적미파개전성능:ε_r = 15.5,Q·f = 42 640 GHz(6 GHz),τ_f = - 13×10~(-6)/ ℃.
MgO-TiO_2-CaO-SiO_2 composite ceramic system with different Mg_2SiO_4 addition amounts were prepared from the raw materials consisting of 92% (mole fraction) MgTiO_3 and 8% (mole fraction) CaTiO_3 by the solid-state reaction method.The effects of Mg_2SiO_4 addition amount on the phase structure, micromorphology and microwave dielectric properties of the system were studied.The results show that there is no secondary phase in the system and the sintering temperature increases with the increasing of Mg_2SiO_4 addition amount.The relative permittivity(ε_r) and the temperature coefficient of resonant frequency (τ_f) of the system are reduced with appropriate addition of Mg_2SiO_4.With the addition of 35% Mg_2SiO_4 (mass fraction), the system sintered at 1 360 ℃ for 2 h show excellent microwave dielectric properties, and their ε_r, Q·f value and τ_f are 15.5, 42 640 GHz (at 6 GHz) and - 13×10~(-6)/ ℃,respectively.
