CAJ | 학술논문

采用双离子束溅射氧化钒薄膜附加热处理的方式制备了纳米二氧化钒薄膜.在热驱动方式下,分别利用四探针测试技术和傅里叶变换红外光谱技术对纳米二氧化钒薄膜的电学与光学半导体-金属相变特性进行了测试与分析.实验结果表明,电学相变特性与光学相变特性之间存在明显的偏差,电学相变温度为63℃,高于光学相变温度,60℃;电学相变持续的温度宽度较光学相变持续温度宽度宽;在红外光波段,随着波长的增加,纳米二氧化钒薄膜的光学相变温度逐渐增大,由半导体相向金属相转变的初始温度逐渐升高,相变持续的温度宽度变窄.在红外光波段,纳米二氧化钒薄膜的光学相变特性可以通过光波波长进行调控,电学相变特性更适合表征纳米VO_2薄膜的半导体-金属相变特性.
채용쌍리자속천사양화범박막부가열처리적방식제비료납미이양화범박막.재열구동방식하,분별이용사탐침측시기술화부리협변환홍외광보기술대납미이양화범박막적전학여광학반도체-금속상변특성진행료측시여분석.실험결과표명,전학상변특성여광학상변특성지간존재명현적편차,전학상변온도위63℃,고우광학상변온도,60℃;전학상변지속적온도관도교광학상변지속온도관도관;재홍외광파단,수착파장적증가,납미이양화범박막적광학상변온도축점증대,유반도체상향금속상전변적초시온도축점승고,상변지속적온도관도변착.재홍외광파단,납미이양화범박막적광학상변특성가이통과광파파장진행조공,전학상변특성경괄합표정납미VO_2박막적반도체-금속상변특성.
Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by du-al ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 ℃, higher than that defined by optical phase transiton property at 5 μm, 60 ℃; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semi-conductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition proper-ties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave hand. The phase transition properties can be tuned through wavelength in infrared wave hand, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.