CAJ | 학술논문

采用脉冲激光沉积方法(PLD)在不同温度的Si(100)衬底上制备了Gd2O3栅介质薄膜,利用X射线衍射、X射线反射率以及光电子能谱等方法对它的结构、组成以及价带偏移等进行了研究.结果表明:衬底温度为300℃时,Gd2O3薄膜呈非晶态；当衬底温度为650℃时,形成单斜相的Gd2O3薄膜.XPS和XRR 结果确定其界面主要是由于界面反应形成的钆硅酸盐.通过XPS分析得到Gd2O3与Si之间的价带偏移为(-2.28±0.1)eV.
채용맥충격광침적방법(PLD)재불동온도적Si(100)츤저상제비료Gd2O3책개질박막,이용X사선연사、X사선반사솔이급광전자능보등방법대타적결구、조성이급개대편이등진행료연구.결과표명:츤저온도위300℃시,Gd2O3박막정비정태；당츤저온도위650℃시,형성단사상적Gd2O3박막.XPS화XRR 결과학정기계면주요시유우계면반응형성적구규산염.통과XPS분석득도Gd2O3여Si지간적개대편이위(-2.28±0.1)eV.
Gd2O3 thin films were deposited on Si(100)substrates by pulsed laser deposition (PLD).The structure,composition and band offset were investigated by X-ray diffraction (XRD),X-ray reflectivity(XRR),X-ray photoelectron spectroscopy(XPS)and ultraviolet photoemission spectroscopy(UPS).The results show that,the Gd2O3 thin film is amorphous when growing at 300 ℃ and is crystallized into monoclinic structure at 650 ℃.The formation of Gd-silicate interfacial layer due to interface reaction is confirmed by XRR and XPS.The valence band offset(△Ev)of(-2.28±0.1)eV is obtained by XPS.