东南大学学报(英文版)
東南大學學報(英文版)
동남대학학보(영문판)
JOURNAL OF SOUTHEAST UNIVERSITY
2003年
4期
317-319
,共3页
带隙基准%启动电路%CMOS%低电压
帶隙基準%啟動電路%CMOS%低電壓
대극기준%계동전로%CMOS%저전압
bandgap reference%start-up circuit%CMOS%low voltage
本文提出了一种带隙基准电压源,它能产生低于1V的精确基准电压.该电路有较高性能的启动电路使电路在上电时能进入正确的状态.在0.25 μm CMOS工艺条件下,电路的各项性能指标采用HSPICE进行模拟验证.模拟结果表明该电路在2.2 V～3.3 V的电源电压变化范围内、在-10～80 ℃温度变化范围内,输出电压的变化不超过11 mV.
本文提齣瞭一種帶隙基準電壓源,它能產生低于1V的精確基準電壓.該電路有較高性能的啟動電路使電路在上電時能進入正確的狀態.在0.25 μm CMOS工藝條件下,電路的各項性能指標採用HSPICE進行模擬驗證.模擬結果錶明該電路在2.2 V～3.3 V的電源電壓變化範圍內、在-10～80 ℃溫度變化範圍內,輸齣電壓的變化不超過11 mV.
본문제출료일충대극기준전압원,타능산생저우1V적정학기준전압.해전로유교고성능적계동전로사전로재상전시능진입정학적상태.재0.25 μm CMOS공예조건하,전로적각항성능지표채용HSPICE진행모의험증.모의결과표명해전로재2.2 V～3.3 V적전원전압변화범위내、재-10～80 ℃온도변화범위내,수출전압적변화불초과11 mV.
This paper proposes a resistorless CMOS bandgap reference (BGR) circuit capable of generating a voltage less than 1V and presents a high performance start-up circuit that can make the BGR circuit achieve the correct operation point at power on. The simulation with Hspice was carried out using a 0.25 μm CMOS process. The results indicate that the proposed BGR circuit can operate on a 2.2 to 3.3 V power supply and its output voltage has a variation of 11 mV at -10 to 80 ℃.
