CAJ | 학술논문

为提高半导体超辐射器件的输出功率，在原有的将超辐射发光管(SLD)与半导体光放大器(SOA)单片集成的基础上，将器件电流注入区中心轴线倾斜6°，制得了1.5 μm倾斜结构的InGaAsP/InP集成超辐射光源。发现这种新型结构的单片集成器件具有抑制激射的功能。在较低的电流注入下，得到了38 mW的脉冲超辐射输出功率。其光谱宽度(FWHM)和平行、垂直于结平面的远场半宽分别为16 nm，15°和64°。同时，通过对该集成器件特性的研究，发现如何增加SOA部分的入射光功率是提高该集成器件性能的一个十分关键的因素。
위제고반도체초복사기건적수출공솔，재원유적장초복사발광관(SLD)여반도체광방대기(SOA)단편집성적기출상，장기건전류주입구중심축선경사6°，제득료1.5 μm경사결구적InGaAsP/InP집성초복사광원。발현저충신형결구적단편집성기건구유억제격사적공능。재교저적전류주입하，득도료38 mW적맥충초복사수출공솔。기광보관도(FWHM)화평행、수직우결평면적원장반관분별위16 nm，15°화64°。동시，통과대해집성기건특성적연구，발현여하증가SOA부분적입사광공솔시제고해집성기건성능적일개십분관건적인소。
Based on original idea about monolithic integration of the SLD (superluminescent diode) with SOA (semiconductor optical amplifier), the axis of current injection region was tilted by 6° with respect to the output facet normal, by this means, 1.5 μm InGaAsP/InP integrated superluminescent light source with tilted structure has been fabricated. High superluminescent power of 38 mW was obtained at lower pumping level by co-operation of the two sections. The spectral full width at half maximum (FWHM) is 16 nm, and the FWHM far field pattern (FFP) parallel and perpendicular to the junction plane are 15° and 64°, respectively. A new phenomenon was discovered, in which the lasing action was suppressed by pumping the SLD section of the integrated device properly.