CAJ | 학술논문

MOS管或IC在辐照以前，使其在较长时间内(约200h)处于一定的高温(120。C)下并加偏压。这一作用会改变器件对电离辐射的响应。器件会产生更大的N管阈值电压漂移，IC会产生更大的漏电流(一个量级以上)，减小器件的时间参数退化。Burn-in效应具有很重要的辐射加固方面的意义：1)不考虑这个因素会过高估计器件的时间参数的衰退，从而淘汰掉一些可用的器件；2)对IC的静态漏电流估计不足可导致器件提前失效。
MOS관혹IC재복조이전，사기재교장시간내(약200h)처우일정적고온(120。C)하병가편압。저일작용회개변기건대전리복사적향응。기건회산생경대적N관역치전압표이，IC회산생경대적루전류(일개량급이상)，감소기건적시간삼수퇴화。Burn-in효응구유흔중요적복사가고방면적의의：1)불고필저개인소회과고고계기건적시간삼수적쇠퇴，종이도태도일사가용적기건；2)대IC적정태루전류고계불족가도치기건제전실효。
The exposure of MOS transistors or IC's to a high temperature (about 120 C) for one week or longer with a bias voltage, which is called burn-in, before radiation will change the response of devices to ionizing radiation. The radiation effects of the burn-in device differ from those of the non-burn-in device. For NMOS devices, greater threshold-voltage drift will occur, and for IC's, more leakage current and less time degradation can be induced. Research of burn-in effects is very significant for radiation hardness: 1) neglection of these effects will lead to overestimation of the time degradation of IC's, causing some possibly usable devices to be discarded; 2) underestimation of the static leakage current of IC's will make the device fail in advance.