CAJ | 학술논문

利用气相输运方法,在(111)面硅衬底上制备了名义上原子数分数为2%的Li掺杂的ZnO纳米棒(样品A).作为比较,我们在相同的生长条件下制备了没有任何掺杂的ZnO纳米棒(样品B).XRD分析测试表明:样品A和样品B中的ZnO纳米棒具有纤锌矿六边形结构,没有其他氧化物,例如Li2O.Hall效应测量表明:样品A导电类型为p型,空穴载流子浓度为6.72×1016 cm-3,空穴载流子迁移率为2.46 cm2·V-1·s-1.样品B为n型,电子载流子浓度为7.16×1018 cm-3,电子载流子迁移率为4.73 cm2·V-1·s-1.低温光致发光光谱测试表明,样品A和样品B发光峰明显的区别是位于3.351 eV(样品B)和 3.364 eV(样品A)处.根据文献报道,在没有掺杂的ZnO中,3.364 eV发光峰源于施主束缚激子发光.通过变温光致发光光谱的测试,证明了在样品A中,位于3.351 eV的发光峰源于受主束缚激子发光,其光学受主能级位于价带顶142 meV处.
이용기상수운방법,재(111)면규츤저상제비료명의상원자수분수위2%적Li참잡적ZnO납미봉(양품A).작위비교,아문재상동적생장조건하제비료몰유임하참잡적ZnO납미봉(양품B).XRD분석측시표명:양품A화양품B중적ZnO납미봉구유섬자광륙변형결구,몰유기타양화물,례여Li2O.Hall효응측량표명:양품A도전류형위p형,공혈재류자농도위6.72×1016 cm-3,공혈재류자천이솔위2.46 cm2·V-1·s-1.양품B위n형,전자재류자농도위7.16×1018 cm-3,전자재류자천이솔위4.73 cm2·V-1·s-1.저온광치발광광보측시표명,양품A화양품B발광봉명현적구별시위우3.351 eV(양품B)화 3.364 eV(양품A)처.근거문헌보도,재몰유참잡적ZnO중,3.364 eV발광봉원우시주속박격자발광.통과변온광치발광광보적측시,증명료재양품A중,위우3.351 eV적발광봉원우수주속박격자발광,기광학수주능급위우개대정142 meV처.
Li-doped ZnO nanorods was grown on n-Si (111) substrate by chemical vapor deposition. XRD pattern showed that the nanorods are pure wurtzite ZnO of hexagonal crystal structure without any other oxide, such as Li2O. Hall effect experiment under Van der Pauw configuration showed that Li-doped ZnO nanorods behave the p-type conductivity with hole concentration of 6.72×1016 cm-3 and a Hall mobility of 2.46 cm2 ·V-1·s-1. A neutral acceptor-bound exciton emission (A°X) was confirmed by the measurements of temperature-dependent photoluminescence (PL) spectra. The optical acceptor energy level is calculated to be about 142 meV.