CAJ | 학술논문

为了研究Boost变流器中MOSFET门极驱动电路的电磁干扰（EMI）发射特性,通过测试将Boost变流器门极信号的EMI发射与整机EMI发射分离。分离的测试结果表明门极电路自身也会引起过量的EMI发射,是重要的EMI噪声源。论文还分析了门极驱动电压信号过冲的形成原理和由此带来的EMI问题,提出了一种通过消除门极驱动信号电压过冲的方法来抑制过度的EMI发射。仿真分析和实验测试结果证实了这种EMI抑制方法是切实有效的。
위료연구Boost변류기중MOSFET문겁구동전로적전자간우（EMI）발사특성,통과측시장Boost변류기문겁신호적EMI발사여정궤EMI발사분리。분리적측시결과표명문겁전로자신야회인기과량적EMI발사,시중요적EMI조성원。논문환분석료문겁구동전압신호과충적형성원리화유차대래적EMI문제,제출료일충통과소제문겁구동신호전압과충적방법래억제과도적EMI발사。방진분석화실험측시결과증실료저충EMI억제방법시절실유효적。
In order to investigate the electromagnetic interference（EMI） behavior of the drive circuit of MOSFET in Boost converter,this paper firstly separates the EMI emission of gate drive circuit from the EMI emission of the whole circuit of a prototype of Boost converter.The measured EMI demonstrates the gate drive circuit is a serious EMI source.The paper then analyzes the principle of the overshoot of drive voltage,and proposes a method to suppress excess EMI emission by eliminating the drive overshoot for Boost converter.The effectiveness of the EMI suppression method is testified by simulation and experiments.