材料导报
材料導報
재료도보
MATERIALS REVIEW
2010年
7期
127-131
,共5页
梁李敏%刘彩池%解新建%王清周
樑李敏%劉綵池%解新建%王清週
량리민%류채지%해신건%왕청주
GaN%缺陷%异质外延%横向外延%缓冲层%柔性衬底
GaN%缺陷%異質外延%橫嚮外延%緩遲層%柔性襯底
GaN%결함%이질외연%횡향외연%완충층%유성츤저
GaN%defect%heteroepitaxy%lateral epitaxial%buffer layer%flexible substrates
概述了GaN异质外延生长中衬底的选择以及缺陷的形成机理,从缓冲层技术、横向外延技术、柔性衬底技术等生长工艺方面综述了国内外GaN基半导体薄膜生长的最新研究和进展,并对其优缺点进行了分析比较,认为发展同质外延将有希望解决现在异质外延生长中存在的问题,最后展望了GaN基薄膜同质外延生长的前景.
概述瞭GaN異質外延生長中襯底的選擇以及缺陷的形成機理,從緩遲層技術、橫嚮外延技術、柔性襯底技術等生長工藝方麵綜述瞭國內外GaN基半導體薄膜生長的最新研究和進展,併對其優缺點進行瞭分析比較,認為髮展同質外延將有希望解決現在異質外延生長中存在的問題,最後展望瞭GaN基薄膜同質外延生長的前景.
개술료GaN이질외연생장중츤저적선택이급결함적형성궤리,종완충층기술、횡향외연기술、유성츤저기술등생장공예방면종술료국내외GaN기반도체박막생장적최신연구화진전,병대기우결점진행료분석비교,인위발전동질외연장유희망해결현재이질외연생장중존재적문제,최후전망료GaN기박막동질외연생장적전경.
Selection of substrate and mechanism of defect in GaN heteroexpitaxy growth are summarized, then the research status and progress of GaN-based film growth are reviewed in terms of buffer layer technology, expitaxial lateral overgrowth, flexible substrates and other heteroexpitaxy technologies. Meanwhile, the advantages and disadvantages of these growth technologies are compared and analyzed, and isoepitaxialgrowth of GaN-based film is regarded as the most prospective method which can avoid the lattice dismatch and thermal dismatch existing in heteroexpitaxy growth. Finally, the prediction of isoepitaxialgrowth of GaN-based film is given.
