CAJ | 학술논문

建立了不同结构的InP基PIN型In0.53Ga0.47As探测器光响应的物理模型.通过引入收集效率函数,模拟计算了探测器量子效率和光响应.采用该模型分别研究了正面进光和背面进光情况下典型的In0.53Ga0.047As/InP PIN探测器的结构参数对器件量子效率的影响.在此基础上提出了两种改进的背照射InGaAs/InP探测器结构,并讨论了其结构参数的优化.
건립료불동결구적InP기PIN형In0.53Ga0.47As탐측기광향응적물리모형.통과인입수집효솔함수,모의계산료탐측기양자효솔화광향응.채용해모형분별연구료정면진광화배면진광정황하전형적In0.53Ga0.047As/InP PIN탐측기적결구삼수대기건양자효솔적영향.재차기출상제출료량충개진적배조사InGaAs/InP탐측기결구,병토론료기결구삼수적우화.
A modified physical model on the optical response of InP-based In0.53Ga0.47As PIN photodetectors was presented. By introducing a collecting factor, the optical response and quantum efficiency were simulated. The influences of device parameters on quantum efficiency of typical In0.53Ga0.47As/InP PIN photodetectors under both front and backside illuminated conditions were investigated by using our model. Furthermore, two modified InGaAs/InP PD structures for back-illumination were proposed, and the optimal structural parameters were discussed.