CAJ | 학술논문

InGaAsP/InP双异质结构外延片在直流负偏压120 V作用下,利用射频溅射和光刻剥离技术在样品表面淀积厚为110 nm的W0.95Ni0.05金属薄膜应变条，并在该应变条下的半导体内形成了对InGaAsP/InP双异质结构侧向光具有良好限制作用的光弹波导结构。W0.95Ni0.05金属薄膜及由其形成的光弹波导器件在氢氮混合气体的保护下，分别在250 ℃、350 ℃、450 ℃和600 ℃温度下各退火30 min以后，W0.95Ni0.05金属薄膜中压应变减少了十分之一。光弹波导器件输出椭圆形近场光模长、短轴之比由原来的2.0增加到2.2（对2 μm条宽）和2.5增加到2.9（对4 μm条宽）。实验结果证明，这种波导结构具有很高的热稳定性。
InGaAsP/InP쌍이질결구외연편재직류부편압120 V작용하,이용사빈천사화광각박리기술재양품표면정적후위110 nm적W0.95Ni0.05금속박막응변조，병재해응변조하적반도체내형성료대InGaAsP/InP쌍이질결구측향광구유량호한제작용적광탄파도결구。W0.95Ni0.05금속박막급유기형성적광탄파도기건재경담혼합기체적보호하，분별재250 ℃、350 ℃、450 ℃화600 ℃온도하각퇴화30 min이후，W0.95Ni0.05금속박막중압응변감소료십분지일。광탄파도기건수출타원형근장광모장、단축지비유원래적2.0증가도2.2（대2 μm조관）화2.5증가도2.9（대4 μm조관）。실험결과증명，저충파도결구구유흔고적열은정성。
Deposition of 110 nm-thick W0.95Ni0.05 metal thin film stripes on InGaAsP/InP heterostructure wafer is carried out using both RF sputtering with the substrate under a negative DC bias of 120 V and a photoresist lift-off technique. The photoelastic waveguides, which achieve the lateral confinement of light in InGaAsP/InP heterostructures, are formed in semiconductor beneath the stripes of W0.95Ni0.05 thin film. The compression strain in the metal thin film is reduced by a factor of about 10%, and ratio of ellipse axises for near-field optical patterns increases from 2.0 to 2.2 for the 2 μm-wide stressor, and from 2.5 to 2.9 for 4 μm-wide stressor after W0.95Ni0.05 metal thin film and photoelastic waveguide devices are annealed at 250 ℃, 350 ℃, 450 ℃ and 600 ℃ for 30 minutes in forming gas. These experimental results have well confirmed high thermal stability of the waveguide structures.