固体电子学研究与进展
固體電子學研究與進展
고체전자학연구여진전
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS
2011年
2期
130-135
,共6页
功率半导体器件%电子注入增强型栅极晶体管%高温%闩锁%失效分析
功率半導體器件%電子註入增彊型柵極晶體管%高溫%閂鎖%失效分析
공솔반도체기건%전자주입증강형책겁정체관%고온%산쇄%실효분석
power semiconductor device%injection enhancement gate transistor (IEGT)%high temperature%latch-up%failure analysis
介绍了平面栅电子注入增强型栅极晶体管(IEGT)的闩锁效应,讨论了温度对关键特性参数如通态压降、正向阻断电压及开关时间的影响.利用ISE软件模拟了IEGT在高温下的导通特性、阻断特性和开关特性,分析了IEGT在高温下的失效原因,提出了改善其高温安全工作区(SOA)的措施.
介紹瞭平麵柵電子註入增彊型柵極晶體管(IEGT)的閂鎖效應,討論瞭溫度對關鍵特性參數如通態壓降、正嚮阻斷電壓及開關時間的影響.利用ISE軟件模擬瞭IEGT在高溫下的導通特性、阻斷特性和開關特性,分析瞭IEGT在高溫下的失效原因,提齣瞭改善其高溫安全工作區(SOA)的措施.
개소료평면책전자주입증강형책겁정체관(IEGT)적산쇄효응,토론료온도대관건특성삼수여통태압강、정향조단전압급개관시간적영향.이용ISE연건모의료IEGT재고온하적도통특성、조단특성화개관특성,분석료IEGT재고온하적실효원인,제출료개선기고온안전공작구(SOA)적조시.
The latch-up effect of the planer gate electron injection enhancement gate transis- tor (IEGT) is introduced. Influences of temperature on the key characteristic parameters, such as, the on-state voltage drop, forward blocking voltage, switching time, are discussed. Conduct- ing, blocking and switching characteristics at high temperature of IEGT are simulated by ISE simulator. Lastly, the failure reason and safe operation area (SOA) of IEGT devices at high tem- perature is analyzed and the improvement measures are presented.
