CAJ | 학술논문

采用超声搅拌化学浴法(UCBD)在SnO2:F 透明导电玻璃衬底上制备了CdS薄膜.研究了退火和CdCl2处理对UCBD-CdS薄膜的表面形貌、晶体结构和直接带隙的影响,比较了沉积时间对UCBD-CdS薄膜中CdS聚集体颗粒大小和堆积致密性的影响.结果表明,CdCl2处理可使CdS聚集体中的小颗粒重新熔合在一起,但CdS聚集体的大小并没有改变.在UCBD-CdS薄膜的沉积过程中,CdS薄膜的横向和纵向生长速率之比会随着沉积时间的不同而改变,且沉积时间是获得大颗粒的CdS聚集体和致密的UCBD-CdS薄膜的重要影响因素.当沉积时间为40 min 时,获得的UCBD-CdS薄膜较致密,CdS聚集体的大小为180 nm,膜厚为80.8 nm,适合作为薄膜太阳电池的窗口层.
채용초성교반화학욕법(UCBD)재SnO2:F 투명도전파리츤저상제비료CdS박막.연구료퇴화화CdCl2처리대UCBD-CdS박막적표면형모、정체결구화직접대극적영향,비교료침적시간대UCBD-CdS박막중CdS취집체과립대소화퇴적치밀성적영향.결과표명,CdCl2처리가사CdS취집체중적소과립중신용합재일기,단CdS취집체적대소병몰유개변.재UCBD-CdS박막적침적과정중,CdS박막적횡향화종향생장속솔지비회수착침적시간적불동이개변,차침적시간시획득대과립적CdS취집체화치밀적UCBD-CdS박막적중요영향인소.당침적시간위40 min 시,획득적UCBD-CdS박막교치밀,CdS취집체적대소위180 nm,막후위80.8 nm,괄합작위박막태양전지적창구층.
We deposited CdS thin films onto F-doped SnO2 transparent conductive glass by ultrasonicagitation chemical bath deposition (UCBD). The influence of the annealing and CdCl2-treatment on thesurface morphology, crystal structure, and direct band gap of the UCBD-CdS thin films was investigated.The effect of deposition time on the grain size of the CdS aggregates and the stack denseness of theUCBD-CdS thin films was compared. The results reveal that the small grains in the CdS aggregates weremelted together and the CdS aggregate size did not change in the UCBD-CdS thin films after theCdCl2-treatment procedure. It is interesting that the ratio of the horizontal to vertical deposition rate variedwith deposition time over the deposition period of the UCBD-CdS thin films. The deposition time was veryimportant to obtain large CdS aggregate grains and dense UCBD-CdS thin films. Over a deposition time of40 min the resulting UCBD-CdS thin films were dense and had a 180 nm grain size of CdS aggregates anda 80.8 nm of thin film thickness. The large-grained and dense UCBD-CdS thin films were suitable for thinfilm solar cells as a window layer.