真空科学与技术学报
真空科學與技術學報
진공과학여기술학보
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY
2001年
1期
64-66
,共3页
曾葆青%谢扩军%杨中海%季天仁%黄金源%杨崇峰
曾葆青%謝擴軍%楊中海%季天仁%黃金源%楊崇峰
증보청%사확군%양중해%계천인%황금원%양숭봉
场致发射%金刚石薄膜%真空微电子学%冷阴极
場緻髮射%金剛石薄膜%真空微電子學%冷陰極
장치발사%금강석박막%진공미전자학%랭음겁
采用微波等离子体方法在铜片上沉积了多晶金刚石薄膜,用该薄膜制成的场致发射体的开启电压较低,发射电流密度较高。利用自制的场致发射阵列阴极高真空测试台测试了1~100 mA/cm2的发射电流密度特性,对应的电场强度为2.0~3.5 MV/m。从拟合F-N公式得到的功函数Φ≈0.025 eV,所发射电子轰击荧光屏后能产生明亮的光斑。
採用微波等離子體方法在銅片上沉積瞭多晶金剛石薄膜,用該薄膜製成的場緻髮射體的開啟電壓較低,髮射電流密度較高。利用自製的場緻髮射陣列陰極高真空測試檯測試瞭1~100 mA/cm2的髮射電流密度特性,對應的電場彊度為2.0~3.5 MV/m。從擬閤F-N公式得到的功函數Φ≈0.025 eV,所髮射電子轟擊熒光屏後能產生明亮的光斑。
채용미파등리자체방법재동편상침적료다정금강석박막,용해박막제성적장치발사체적개계전압교저,발사전류밀도교고。이용자제적장치발사진렬음겁고진공측시태측시료1~100 mA/cm2적발사전류밀도특성,대응적전장강도위2.0~3.5 MV/m。종의합F-N공식득도적공함수Φ≈0.025 eV,소발사전자굉격형광병후능산생명량적광반。
Polycrystalline diamond films were grown on copper substrates by microwave plasma chemical vapor deposition(MPCVD).The field emission characteristics of the film was studied.We found that the field emitter made of the film has a low turn-on voltage.The current density of the film can be 1~100 mA/cm2 at the field strengths of 2.0~3.5 MV/m.The work function of the film was found to be 0.025 eV by data fitting of the Fowler-Nordheim plot.When emission electrons bombarded a fluorescent screen,fairly bright spots could be observed.