CAJ | 학술논문

由于金刚石与Si有较大的表面能差,利用化学气相沉积(CVD)制备金刚石膜时,金刚石在镜面光滑的Si表面上成核困难,而负衬底偏压能够增强金刚石在镜面光滑Si表面上的成核,表明金刚石核与Si表面的结合力也得到增强.本文分析衬底负偏压引起的离子轰击对Si表面产生的影响之后,基于离子轰击使得Si衬底表面产生了微缺陷(凹坑)增大了金刚石膜与Si衬底结合的面积,理论研究了离子轰击对金刚石膜与Si衬底结合力的影响.
유우금강석여Si유교대적표면능차,이용화학기상침적(CVD)제비금강석막시,금강석재경면광활적Si표면상성핵곤난,이부츤저편압능구증강금강석재경면광활Si표면상적성핵,표명금강석핵여Si표면적결합력야득도증강.본문분석츤저부편압인기적리자굉격대Si표면산생적영향지후,기우리자굉격사득Si츤저표면산생료미결함(요갱)증대료금강석막여Si츤저결합적면적,이론연구료리자굉격대금강석막여Si츤저결합력적영향.
Owing to the large surface energy difference of diamond with silicon, the diamond nucleation on the mirror-polished silicon surface is difficult when diamond films are prepared by chemical vapor deposition. However, the nucleation can be enhanced by a negative substrate bias, indicating that the adhesive force of diamond nuclei on Si surface is improved. The ion bombardment results in a production of micro-defects(pits)on Si substrate surface and therefore the contact area of diamond film with Si surface is enlarged. Based on these results, the influence of ion bombardment on Si surface with the negative bias was analyzed and the effect of ion bombardment on the adhesive force between diamond film and Si substrate was theoretically studied.