CAJ | 학술논문

通过采用微机电系统(MEMS)和微声电子方法,研究了硅基片上横膈膜结构薄膜体声波谐振器(FBAR).器件的串联谐振频率f_s＝2.75 GHz,并联谐振频率f_p＝2.8 GHz,插入损耗IL=-3.7 dB,并联谐振频率品质因子Q_p=260,有效机电耦合系数K_(eff)~2=4.5%.
통과채용미궤전계통(MEMS)화미성전자방법,연구료규기편상횡격막결구박막체성파해진기(FBAR).기건적천련해진빈솔f_s＝2.75 GHz,병련해진빈솔f_p＝2.8 GHz,삽입손모IL=-3.7 dB,병련해진빈솔품질인자Q_p=260,유효궤전우합계수K_(eff)~2=4.5%.
A thin film bulk acoustic resonator(FBAR)fabricated on Si substrate with membrane structure by MEMS and micro-electro-acoustic technologies was studied. The tested device has a series resonant frequency f_s of 2.75 GHz and a parallel resonant frequency f_p of 2.8 GHz. The insertion loss of -3.7 dB,the parallel resonant frequency quality factor (Q) of 260 and the efficient electromechanical coupling factor K_(eff)~2 of 4.5% have been achieved.