南阳理工学院学报
南暘理工學院學報
남양리공학원학보
JOURNAL OF NANYANG INSTITUTE OF TECHNOLOGY
2011年
2期
1-4
,共4页
乔建良%高有堂%钱芸生%常本康
喬建良%高有堂%錢蕓生%常本康
교건량%고유당%전예생%상본강
负电子亲和势%GaN%光电阴极%能级
負電子親和勢%GaN%光電陰極%能級
부전자친화세%GaN%광전음겁%능급
negative electron affinity%GaN%photocathode%energy level
分析了NEAGaN光电阴极的产生背景，介绍了NEAGaN光电阴极的结构以及工作模式，研究了GaN光电阴极的光电发射机理以及NEA特性的形成原因，P型GaN经过Cs、O处理后的有效电子亲和势约为一1．2eV。分析表明：充分激活后形成的双偶极层是表面真空能级降低的原因，体内产生的光电子按照光电发射的“三步模型”逸出到真空中。
分析瞭NEAGaN光電陰極的產生揹景，介紹瞭NEAGaN光電陰極的結構以及工作模式，研究瞭GaN光電陰極的光電髮射機理以及NEA特性的形成原因，P型GaN經過Cs、O處理後的有效電子親和勢約為一1．2eV。分析錶明：充分激活後形成的雙偶極層是錶麵真空能級降低的原因，體內產生的光電子按照光電髮射的“三步模型”逸齣到真空中。
분석료NEAGaN광전음겁적산생배경，개소료NEAGaN광전음겁적결구이급공작모식，연구료GaN광전음겁적광전발사궤리이급NEA특성적형성원인，P형GaN경과Cs、O처리후적유효전자친화세약위일1．2eV。분석표명：충분격활후형성적쌍우겁층시표면진공능급강저적원인，체내산생적광전자안조광전발사적“삼보모형”일출도진공중。
The appearance background of NEA GaN photocathode was analysed, the structure and operation mode of NEA GaN photocathode were discussed. The photoemission mechanism and the formation cause of NEA property for GaN photocathode were studied. The effective electron affinity for p-GaN is about -1.2 eV after being processed with Cs and O. The analysis shows ： the reason of the reduction of vacuum energy level is the formation of the double dipole layer after being fully activated successfully. The photoelectrons from the bulk will escape to the vacuum according to photoemission ＂3-step model＂ theory.
