CAJ | 학술논문

报道了通过隧道结将衬底的导电类型从n型转变到p型,从而可以利用n型GaP作为以n型GaAs为衬底的AlGaInP发光二极管的电流扩展层.n型电流扩展层的电阻率低于p型电流扩展层的电阻率,这种结构改善了电流扩展层的作用,从而提高了发光二极管的光提取效率.对3μm GaP电流扩展层的发光二极管,实验结果表明,隧道结发光二极管的发光功率与具有相同基本结构的传统发光二极管相比,20mA时发光功率提高了50%,100mA时提高了66.7%.
보도료통과수도결장츤저적도전류형종n형전변도p형,종이가이이용n형GaP작위이n형GaAs위츤저적AlGaInP발광이겁관적전류확전층.n형전류확전층적전조솔저우p형전류확전층적전조솔,저충결구개선료전류확전층적작용,종이제고료발광이겁관적광제취효솔.대3μm GaP전류확전층적발광이겁관,실험결과표명,수도결발광이겁관적발광공솔여구유상동기본결구적전통발광이겁관상비,20mA시발광공솔제고료50%,100mA시제고료66.7%.
The n-type GaAs substrates are used and their conductive type is changed to p-type by tunnel junction for AlGaInP light emitting diodes(TJ-LED),then n-type GaP layer is used as current spreading layer.Because resistivity of the n-type GaP is lower than that of p-type,the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type GaP current spreading layer.For TJ-LED with 3μm n-type GaP current spreading layer,experimental results show that compared with conventional LED with p-type GaP current spreading layer,light output power is increased for 50% at 20mA and for 66.7% at 100mA.